Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Stoichiometry »
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Stockbarger method < Stoichiometry < Stokes lines  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]
Ident.Authors (with country if any)Title
000130 (2012) Efficient Preparation of Anhydrous Metallic Triflates and Triflimides under Ultrasonic Activation
000407 (2009) Raman scattering and structural analysis of electrodeposited CuInSe2 and S-rich quaternary CuIn(S,Se)2 semiconductors for solar cells
000869 (2005) Two-stage growth of smooth Cu(In,Ga)Se2 films using end-point detection
000881 (2005) Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges
000889 (2005) Sol-gel synthesis of K3InF6 and structural characterization of K2InC10O10H6F9, K3InC12O14H4F18 and K3InC12O12F18
000B67 (2004) CuIn1-x GaxS2 wide gap absorbers grown by close-spaced vapor transport
000D92 (2003) Chemical elaboration of well defined Cu(In, Ga)Se2 surfaces after aqueous oxidation etching
001173 (2001) Physico-chemical characterization of spray-deposited CuInS2thin films
001190 (2001) Off-stoichiometry effect on the CuInSe2 dielectric function
001430 (2000) Interface redox engineering of Cu(In, Ga)Se2-based solar cells : oxygen, sodium, and chemical bath effects
001510 (1999-12) CARACTERISATION DE COUCHES MINCES DE CuGaSe2 OBTENUES PAR «MOCVD»
001512 (1999-11-29) Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
001779 (1999) A comprehensive characterization of copper indium disulfide thin film
001791 (1998-12-15) Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
001870 (1998-05) Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis
001A89 (1997-09) Relations entre frittage et propriétés de matériaux à base d'oxyde d'indium dopé à l'étain (ITO)
001E57 (1996) Dépôt électrochimique d'un semi-conducteur ternaire : le diséléniure de cuivre et d'indium (CuInSe2)
001E67 (1996) Synthesis and growth of large stoichiometric single crystals of copper indium diselenide by horizontal varying gradient zone freeze technique
001F98 (1995-11-01) Photoluminescence and photoconductivity in CdIn2Te4
002080 (1995-01-02) Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures
002105 (1995) Transport properties of InSex flash evaporated thin films

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