Semiconductor quantum dots < Semiconductor quantum wells < Semiconductor quantum wires

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List of bibliographic references

Number of relevant bibliographic references: 116.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000011 (2013)		Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000823 (2006)		Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
000939 (2005)		Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
000A25 (2004-06-01)		Conductance quantization in deep mesa-etched gate-controlled ballistic electron waveguides
000A27 (2004-05-24)		Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
000A31 (2004-05-03)		Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A37 (2004-04-05)		Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000A49 (2004-01-12)		Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
000A86 (2004)		Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000C13 (2003-10-15)		Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
000C23 (2003-08-15)		Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells
000C25 (2003-08-15)		Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C30 (2003-07-15)		Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
000C35 (2003-06-15)		Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements
000C37 (2003-05-19)		Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C47 (2003-04-01)		Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000C51 (2003-03-24)		GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000C52 (2003-03-17)		Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range
000C53 (2003-03-10)		Determination of built-in electric fields in quaternary InAlGaN heterostructures
000C54 (2003-03-01)		In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

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