Semiconductor diodes < Semiconductor doping < Semiconductor electrolyte interface

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List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000B95 (2004)		9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000E11 (2003)		60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E24 (2002-11-11)		Optically Driven Spin Memory in n-Doped InAs-GaAs Quantum Dots
000E65 (2002-05-13)		Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistors
000F88 (2002)		Lightwave single sideband wavelength self-tunable filter using an InP:Fe crystal for fiber-wireless systems
001011 (2002)		Gas sensing properties of pseudo-Schottky diodes on p-type indium phosphide substrates - Application to O3 and NO2 monitoring in urban ambient air
001121 (2001-02-15)		Influence of Zinc Co-Doping on Carbon Doped InGaAs
001443 (2000)		High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range
001493 (2000)		0.7W in singlemode fibre from 1.48μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure
001600 (1999-02)		Improvement of crystalline quality of 3-inch InP wafers
001695 (1999)		NO2 detection by a resistive device based on n-InP epitaxial layers
001715 (1999)		Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001727 (1999)		High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
001786 (1999)		0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001788 (1999)		0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001885 (1998-02-16)		Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells
001991 (1998)		InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
001997 (1998)		High power added efficiency at 35GHz on InP DH HEMTs
001B00 (1997-07-15)		X-ray photoemission studies and energy-band diagrams of (In,Se)-CuInSe2/SnO2 heterostructures
001C19 (1997)		Procedure to minimize interface-state errors in MIS doping profile determinations

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