Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Selective area »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Selection rules < Selective area < Selective area growth (SAG)  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000020 (2013) Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
000045 (2013) Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
000172 (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000174 (2011) Structural analysis of site-controlled InAs/InP quantum dots
000526 (2008) One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000541 (2008) Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000659 (2007) Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000D62 (2003) Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
001C02 (1997) Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers
001C11 (1997) Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
001C69 (1997) Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications
002102 (1995) Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Selective area" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Selective area" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Selective area
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024