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Schottky barrier diode < Schottky barrier diodes < Schottky barrier photodetectors  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000B80 (2004) Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
001011 (2002) Gas sensing properties of pseudo-Schottky diodes on p-type indium phosphide substrates - Application to O3 and NO2 monitoring in urban ambient air
001237 (2001) Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics
001443 (2000) High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range
001453 (2000) Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001462 (2000) Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
001715 (1999) Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001744 (1999) Electrical study of the Au/InSb/InP system
001748 (1999) Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures
001C19 (1997) Procedure to minimize interface-state errors in MIS doping profile determinations
001C42 (1997) Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of Schottky diodes
001C90 (1997) Deep trap characterisation and conduction band offset determination of Al0.48In0.52As/(Ga0.7Al0.3)0.48In0.52As heterostructures
001D32 (1996-12) Caractérisation électrique du matériau AlInAs élaboré par épitaxie par jets moléculaires à basse température
001E87 (1996) Practical methods to improve DLTS data smoothing
001F46 (1996) Extended generation profile : E.B.I.C. model
002200 (1995) Correlations between the electrical characteristics of metal-oxide-InP tunnel diodes and the nature of thin interfacial oxides
002228 (1994-12) Etude par spectroscopie DLTS des structures formées sur InP(n) par oxydation plasma
002744 (1993) A new encapsulation method of InP during post implantation annealing

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