Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « STM »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
SQUID devices < STM < Saccharin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]
Ident.Authors (with country if any)Title
000C45 (2003-04-14) Self-assembled molecular chains formed by selective adsorption of lead-phthalocyanine on InSb(100)-(4×2)/c(8×2)
000D72 (2003) Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
000E14 (2002-12-15) Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface
000E40 (2002-08-15) Imaging of the electronic states of self-assembled InxGa1-xAs quantum dots by scanning tunneling spectroscopy
000E54 (2002-06-15) Instability of metallic In-Sn dimer lines on Si(100) 2×1 surface
000E75 (2002-03-01) Resonant electromagnetic field cavity between scanning tunneling microscope tips and substrate
001083 (2001-08) Atomic slide puzzle: Self-diffusion of an impure atom
001098 (2001-05-15) Red organic light emitting device made from triphenylene hexaester and perylene tetraester
001105 (2001-04-16) Subsurface Dimerization in III-V Semiconductor (001) Surfaces
001253 (2001) Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface
001319 (2000-09) Nanostructures sur Substrats Semiconducteurs
001321 (2000-09) Elaboration et caractérisation physique par microscopies à champ proche de nanostructures semi-conductrices
001385 (2000) Strained InAs nanostructures self-organised on high-index InP(113)B
001437 (2000) In, Sn dimers on Si(100)2 x 1 surface : ab initio calculations and STM experiments
001475 (2000) Co-deposition of In and Sn on the Si(100) 2 × 1 surface : growth of a one-dimensional alloy?
001502 (1999-12-01) Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy
001503 (1999-12-01) Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy
001506 (1999-12) Instabilité de croissance dans les couches épitaxiées contraintes. Etude par microscopie à effet tunnel du système In1-xGaxAs / InP (001)
001575 (1999-05-03) Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy
001632 (1999) Ultra high density data storage on phase change materials with electrical micro-tips
001845 (1998-07-06) Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "STM" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "STM" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    STM
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024