Serveur d'exploration sur l'Indium - Analysis (France)

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SILAR method < SIMS < SQUID devices  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]
Ident.Authors (with country if any)Title
000321 (2010) Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
000348 (2010) Characterization of P3HT/PCBM bulk heterojunction photovoltaic devices using advanced secondary ion mass spectrometry techniques
000A72 (2004) Subcellular localization of aluminum and indium in the rat kidney
000D62 (2003) Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
000D83 (2003) Determination of beryllium and self-interstitial diffusion parameters in InGaAs
001045 (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001121 (2001-02-15) Influence of Zinc Co-Doping on Carbon Doped InGaAs
001234 (2001) In situ etching at InGaAs/GaAs quantum well interfaces
001272 (2001) Comparative models for diffusion of Be in InGaAs/InP heterostructures
001285 (2001) A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructure
001397 (2000) Recent developments in thin film analysis by SIMS and EPMA
001481 (2000) Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001482 (2000) Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001665 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001982 (1998) Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001D03 (1997) Beryllium ion implantation into GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructure

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