Serveur d'exploration sur l'Indium - Analysis (France)

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List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
001173 (2001) Physico-chemical characterization of spray-deposited CuInS2thin films
001381 (2000) Structural and photoelectrical properties of sprayed β-In2S3 thin films
001400 (2000) Preparation of highly oriented α-In2Se3 thin films by a simple technique
001427 (2000) Investigation of β-In2S3 growth on different transparent conductive oxides
001432 (2000) InP-based MOEMS and related topics
001436 (2000) In-depth structure of rosette arms in indium phosphide
001534 (1999-09-15) Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials
001654 (1999) Structural, optical and electrical properties of undoped and indium doped zinc oxide prepared by spray pyrolysis
001655 (1999) Structural, compositional and photoluminescence characteristics of CuInSe2 thin films prepared by close-spaced vapor transport
001776 (1999) A novel method for preparing α-In2Te3 polycrystalline thin films
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001B72 (1997) Effet de la température de fabrication sur les propriétés structurales et morphologiques des couches épaisses de In2S3 "spray"
001C39 (1997) Material flow at the surface of indented indium phosphide
001F33 (1996) Growth of CuInSe2, Cu(In,Ga)Se2 and CuIn(Se,S)2 films on SnO2 thin film substrates
002097 (1995) Gravure hélicon de l'InP en plasma HBr. Morphologie et caractérisation des défauts de surface
002162 (1995) Investigation of the plasticity of InP as a function of temperature
002215 (1995) A new simple technique to obtain In2Se3 polycrystalline thin films
002236 (1994-11) Microindentation du phosphure d'indium monocristallin. Rôle des dislocations sur le comportement mécanique et électrique
002619 (1993) Microstructure of high-temperature plastically deformed Zn-doped CdTe ; comparison with In-doped Gaas
002661 (1993) Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe/III-V (GaAs, InP, GaSb)

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