Reflection spectroscopy < Reflection spectrum < Reflectivity

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List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000239 (2011)		Comparison of different dispersion models for single layer optical thin film index determination
000307 (2010)		Influence of aluminum doping in CuInS2 prepared by spray pyrolysis on different substrates
000853 (2006)		Chemically prepared well-ordered InP(001) surfaces
000871 (2005)		Tuning a two-dimensional photonic crystal resonance via optical carrier injection
000875 (2005)		The great potential of coupled substitutions in In2O3 for the generation of bixbyite-type transparent conducting oxides, In2-2xMxSnxO3
000A15 (2005)		Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers
000A56 (2004)		Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
000A67 (2004)		Synthesis, X-ray and optical characterizations of two new oxysulfides: LaInS2O and La5In3S9O3
000A96 (2004)		Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B06 (2004)		New transparent conductors with the M7O12 ordered oxygen-deficient fluorite structure: from In4Sn3O12 to In55Sb1.5O12
000B19 (2004)		MOVPE growth of InN films and quantum dots
000B44 (2004)		High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
000B92 (2004)		Absorption and Raman scattering processes in InN films and dots
001138 (2001)		Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy
001296 (2000-12)		SPECTROSCOPIE OPTIQUE DE COUCHES MASSIVES DE GaN ET D'HETEROSTRUCTURES (In,Ga)N/GaN
001364 (2000)		Caractérisation électrique et optique du diseleniure de cuivre et d'indium
001460 (2000)		Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInas-distributed Bragg mirrors on InP
001461 (2000)		Effect of pressure on direct optical transitions of γ-InSe
001718 (1999)		Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well
001731 (1999)		GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation
001794 (1998-12)		Ellipsométrie spectroscopique ex situ à plusieurs angles d'incidence : caractérisation de couches massives et de structures multicouches

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