Reflection grating < Reflection high energy electron diffraction < Reflection high energy electron diffractometry

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List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000B93 (2004)		A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium
001025 (2002)		Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution
001616 (1999-01)		ETUDE DE LA SENSIBILITE A LA TEMPERATURE DE STRUCTURES LASERS ALUMINO-PHOSPHOREES A MULTI-PUITS QUANTIQUES SUR SUBSTRAT INP
001875 (1998-04)		ETUDE DES MODES DE CROISSANCE ET DES MECANISMES DE RELAXATION DES COUCHES InxGa1-xAs (x < 0,53) CONTRAINTES EN TENSION SUR InP : APPLICATION DANS LA REALISATION D'HETEROSTRUCTURES POUR COMPOSANTS OPTOELECTRONIQUES
001E72 (1996)		Structural aspects of the growth of InAs islands on InP substrate
002539 (1993)		Study of the heterointerfaces InSe on GaSe and GaSe on InSe
002645 (1993)		Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
002658 (1993)		High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature
002668 (1993)		Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
002691 (1993)		Electrical properties of P-rich InP grown by gas source MBE
002722 (1993)		Chemical, structural, and electronic properties of sulfur-passivated InP(001) (2×1) surfaces treated with (NH4)2Sx
002803 (1992)		Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001)
002815 (1992)		Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy
002878 (1992)		In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As
002879 (1992)		In situ characterization of InP surfaces after low-energy hydrogen ion cleaning
002916 (1992)		Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers
002919 (1992)		Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy
002945 (1991)		Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP
002975 (1991)		Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001)
002A65 (1991)		Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties
002C41 (1989)		Quantitative evaluation of the surface segregation in III-V ternary alloys by X-ray photoelectron spectroscopy

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