Rapid technique < Rapid thermal annealing < Rapid thermal processing

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000885 (2005)		Study of structural and optical properties of InSb-doped SiO2 thin films
000968 (2005)		Feasibility of III-V on-silicon strain relaxed substrates
000A86 (2004)		Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000A96 (2004)		Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000C22 (2003-08-15)		Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000E00 (2003)		Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
000F34 (2002)		Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films
000F40 (2002)		Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots
001036 (2002)		Compared rapid thermal annealing procedures of InP
001045 (2002)		Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001121 (2001-02-15)		Influence of Zinc Co-Doping on Carbon Doped InGaAs
001337 (2000-04-17)		Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
001481 (2000)		Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001642 (1999)		The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001672 (1999)		Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001768 (1999)		Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001806 (1998-11-09)		1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
001A31 (1998)		Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001A39 (1998)		A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001D03 (1997)		Beryllium ion implantation into GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructure

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Rapid thermal annealing" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Rapid thermal annealing" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Rapid thermal annealing
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024