Quantum well lasers < Quantum wells < Quantum wire

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List of bibliographic references

Number of relevant bibliographic references: 229.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000020 (2013)		Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
000051 (2013)		InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters
000120 (2012)		InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000125 (2012)		High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys
000154 (2011)		Theory of g-factor enhancement in narrow-gap quantum well heterostructures
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000177 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000199 (2011)		M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices
000205 (2011)		Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds
000217 (2011)		Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
000241 (2011)		Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission
000249 (2011)		A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000303 (2010)		Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications
000312 (2010)		High-index-contrast subwavelength grating VCSEL
000412 (2009)		Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
000430 (2009)		Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000456 (2009)		Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure
000458 (2009)		Electronic structure properties of the In(Ga)As/GaAs quantum dot-quantum well tunnel-injection system
000465 (2009)		Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL

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