Plasmons < Plastic deformation < Plastic flow

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000D11 (2003)		Plastic deformation of III-V semiconductors under concentrated load
001133 (2001)		Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001233 (2001)		In-depth deformation of InP under a Vickers indentor
001468 (2000)		Deformations induced by a Vickers indentor in InP at room temperature
001585 (1999-04)		Optimisation des conditions de croissance et réduction des dislocations dans des monocristaux d'InP élaborés par un procédé Czochralski
001607 (1999-01)		Premiers stades de la relaxation plastique dans les hétérostructures à très faible désaccord de paramètre
001836 (1998-08-24)		Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures
001952 (1998)		Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy
001C91 (1997)		DAFS study of strained III-V epitaxial semiconductors
001E30 (1996-02-01)		Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field
001E88 (1996)		Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide. 2. S doped InP
002044 (1995-06-19)		Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures
002283 (1994-06)		Etude par microscopie électronique en transmission de structures laser (GaInAsP/InP) et de la découpe de puits quantiques (GaAs, GaAlAs) par un mécanisme de glissement de dislocations
002365 (1994)		Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide. I: Undoped InP
002495 (1993-03)		Etude par microscopie électronique en transmission des mécanismes de relaxlation plastique dans les hétérostructures GaInAs/GaAs
002619 (1993)		Microstructure of high-temperature plastically deformed Zn-doped CdTe ; comparison with In-doped Gaas
002684 (1993)		Electronic structure of (In,Ga)As-(Ga,Al)As strained-layer quantum wells
002789 (1992)		Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002D78 (1988)		Internal friction study on the mobility of screw dislocations in undoped InSb
002D83 (1988)		Interaction between dislocations and In in-doped GaAs single crystals under high-temperature plastic deformation
002D86 (1988)		Influence of indium on the dissociation of dislocations in GaAs at high temperature

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