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Serveur d'exploration sur l'Indium - Analysis (France)

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Photoelectronic properties < Photoemission < Photoetching  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000469 (2009) Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing
000718 (2007) Buildup of the InSe/M interface (M = Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy
000811 (2006) Interdiffusion process in the InSe/Pt interface studied by angle- resolved photoemission
000853 (2006) Chemically prepared well-ordered InP(001) surfaces
000C35 (2003-06-15) Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements
000C69 (2003) X-ray photoemission studies on InSb clusters
000E45 (2002-07-15) Barrier lowering and reorientation of dipoles grafted at indium-tin-oxide/polymer interfaces
001124 (2001-01-01) Determination of energy barriers in organic light-emitting diodes by internal photoemission
001407 (2000) Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
001B51 (1997-01-15) Band discontinuities in InxGa1-xAs-InP and InP-AlyIn1-yAs heterostructures: Evidence of noncommutativity
002256 (1994-09) Etude par photoémission des surfaces (111) et (110) imparfaites de silicium
002273 (1994-07) Cs-induced highest EF jump above InAs(110) conduction-band minimum
002297 (1994-04-15) Inverse-photoemission spectroscopy of GaSe and InSe
002311 (1994-02-14) Sb-induced interatomic bond distance stabilization on InP(100) surface
002368 (1994) Photoemission extended X-ray absorption fine structure (PEXAFS): a new approach to probe surface and interface atomic geometry
002497 (1993-03) Développement de la diffraction des photoélectrons à basse énergie cinétique à l'aide du rayonnement synchrotron. Application à l'étude des surfaces InP(110) et H/InP(110)

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