Photodetector < Photodetectors < Photodiode

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List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000099 (2012)		Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
000249 (2011)		A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
000270 (2010)		Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000391 (2009)		Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
000396 (2009)		Status of p-on-n HgCdTe technologies at DEFIR
000401 (2009)		Silicon Photonics Developments in Europe
000417 (2009)		Monolithic integration of InP-based transistors on Si substrates using MBE
000460 (2009)		Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
000480 (2008)		nBn Based Infrared Detectors Using Type-II InAs/(In,Ga)Sb Superlattices
000917 (2005)		Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 μm spectral region
000D16 (2003)		Optimization, design and fabrication of a non-cryogenic quantum infrared detector
001086 (2001-07)		NON-LINÉARITÉS OPTIQUES MOYEN-INFRAROUGES ET DISPOSITIFS DANS LES BOÎTES QUANTIQUES AUTO-ASSEMBLÉES DE SEMI-CONDUCTEURS
001220 (2001)		Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications
001297 (2000-12)		Préparation par épitaxie par jets moléculaires d'alliages III-V à base de thallium
001314 (2000-10)		Croissance auto-organisée de fils et boîtes quantiques d'InAs / InP(001) pour composants optoélectroniques
001358 (2000-01)		InP-based photonic micro-sensor for near field optical investigations
001372 (2000)		Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001464 (2000)		Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction
001577 (1999-05)		PHOTODETECTEURS INFRAROUGE A CAVITE RESONNANTE A BASE DE MATERIAUX III-V DE LA FILIERE INP COUVRANT LA GAMME 1,7 - 2,2 μM
001783 (1999)		2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector
001B92 (1997)		Theoretical study of p-i-n photodetectors' power limitations from 2.5 to 60 GHz

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