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Serveur d'exploration sur l'Indium - Analysis (France)

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Peritectic transformation < Permittivity < Perovskite type compound  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000170 (2011) Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effect
000225 (2011) Electronic and Optical Modeling of Solar Cell Compounds CuGaSe2 and CuInSe2
000A82 (2004) Sequence of structural phase transitions of CsInF4 crystal
000C09 (2003-11-15) Influence of oxygen plasma on electrical and physical parameters of Au-oxide-n-InP structures
000C78 (2003) Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1-xGaxAsySb1-y epilayer on GaSb and InAs
001118 (2001-02-15) Local-field and excitonic effects in the calculated optical properties of semiconductors from first-principles
001459 (2000) Electrical characterization of aluminous cement at the early age in the 10 Hz-1 GHz frequency range
001465 (2000) Dielectric measurement study of lamellar CuInP2Se6: successive transitions towards a ferroelectric state via an incommensurate phase?
001498 (1999-12-15) Effects of pressure and temperature on the dielectric constant of GaS, GaSe, and InSe: Role of the electronic contribution
001C80 (1997) Electrical conduction in POxNyInZ films deposited on InP
001C82 (1997) Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
002029 (1995-09) Couches minces d'oxyde d'indium dopé à l'oxyde d'étain fabriquées par évaporation laser. Caractérisations et applications
002164 (1995) Infrared reflectivity and electrical parameters of Zn-doped degenerate CuInSe2
002244 (1994-10) Vers une nouvelle famille de matériaux antiferroélectriques et ferroélectriques: les thiophosphates lamellaires CuMP2S6 (M=Cr, In)
002369 (1994) Paraelectric-ferroelectric transition in the lamellar thiophosphate CuInP2S6
002433 (1994) Correlation between dielectric properties and nanostructure in a Pb(In1/2)O3 ceramic
002773 (1992-03) Oxydation thermique sous fluor d'InP(100). Application à la passivation des semiconducteurs III-V
002970 (1991) The dielectric constant measurement of CdIn2Te4
002C00 (1990) 40 GHz measurement on InP/air gap line by picosecond electro-optic sampling

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