Serveur d'exploration sur l'Indium - Analysis (France)

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Passband < Passivation < Passive component  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 74.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000148 (2011) Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management
000360 (2010) An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia
000469 (2009) Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing
000483 (2008) Ultra-thin metal layer passivation of the transparent conductive anode in organic solar cells
000573 (2008) Growth and formation of hybrid structures on InP by alternated anodizations in aqueous media and liquid ammonia
000574 (2008) First evidence of stable P-N bonds after anodic treatment of InP in liquid ammonia : A new III-V material passivation route
000853 (2006) Chemically prepared well-ordered InP(001) surfaces
000908 (2005) Passivation of InP(100) substrates : first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies
000A12 (2005) Cadmium sulfide/indium phosphide as a model system for understanding indium related chemical reactivity at CIGS/CDS interface : XPS and ex situ luminescence investigations
000B80 (2004) Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
001075 (2001-10) Indium-Based Interface Chemical Engineering by Electrochemistry and Atomic Layer Deposition for Copper Indium Diselenide Solar Cells
001088 (2001-07) Dépôts de nitrure de silicium assistés par plasma à couplage inductif ICP-PECVD. Application à la passivation du transistor à haute mobilité électronique GaInAs/InP
001192 (2001) Numerical analysis of forward I-V characteristics of Au/InP interface restructured by antimony
001224 (2001) Inductively coupled plasma -- plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)
001367 (2000) Wet treatment based interface engineering for high efficiency Cu(In, Ga)Se2 solar cells
001430 (2000) Interface redox engineering of Cu(In, Ga)Se2-based solar cells : oxygen, sodium, and chemical bath effects
001551 (1999-07-01) Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices
001569 (1999-05-24) Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications
001680 (1999) Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
001722 (1999) Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants

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