Organization < Organometallic compound < Organometallic compounds

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List of bibliographic references

Number of relevant bibliographic references: 67.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000730 (2007)		AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
001621 (1999)		Transistors et circuits intégrés à hétérostructures (III-V)
001C07 (1997)		Spatially resolved optical of spectroscopy of GaAs islands on InAs (111)
001C59 (1997)		InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
002171 (1995)		High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
002251 (1994-10)		Dépôt par MOCVD de couches minces de CuInSe2 pour la conversion photovoltaïque de l'énergie solaire
002269 (1994-07)		Elaboration par E.P.V.O.M. d'un photodétecteur A Ga1-xInxSb et Ga1-xInxAsySb1-y pour télécommunications à plus de deux micromètres
002337 (1994)		Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAs
002391 (1994)		LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002490 (1993-06)		Contribution à l'étude par épitaxie en phase vapeur aux organométalliques de matériaux (Al)GaInAs(P) sur InP pour composants opto et microélectroniques dans un réacteur multi-plaques expérimental
002592 (1993)		Optical studies of InP/InAlAs/InP interface recombinations
002608 (1993)		Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces : photoluminescence vs. Raman
002616 (1993)		Monolithic integration of 2×2 switch and optical amplifier with 0dB fibre to fibre insertion loss grown by LP-MOCVD
002639 (1993)		Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
002663 (1993)		Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb
002730 (1993)		Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy
002743 (1993)		A new organoindium precursor for electronic materials
002790 (1992)		Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
002791 (1992)		Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP
002849 (1992)		MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection
002850 (1992)		MOCVD growth of CuInSe2 : first results

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