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Serveur d'exploration sur l'Indium - Analysis (France)

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Optical microcavity < Optical microscopy < Optical mixing  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000102 (2012) Probing Quantum Confinement within Single Core-Multishell Nanowires
000540 (2008) Microstructure and microhardness of cold-sprayed cuniln coating
000589 (2008) Demonstration of planar thick InP layers by selective MOVPE
000A24 (2004-06-01) Study of thiol-induced adhesion of stressed III-V semiconductor on wax using thin film elastic relaxation
000A53 (2004) Etude des équilibres des phases dans le système Ag-Sn-In à 280 °C
000B37 (2004) Indentation punching through thin (011) InP
000B49 (2004) Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000B93 (2004) A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium
000D62 (2003) Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
001932 (1998) Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE
001982 (1998) Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy
001A86 (1997-09-15) Optical observation of twinning patterns characteristic of CuPtB atomic ordering in Ga1-xInP
001C39 (1997) Material flow at the surface of indented indium phosphide
001F05 (1996) Material flow under an indentor in indium phosphide
002895 (1992) Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
002A09 (1991) Lateral solid phase cyrstallization of amorphous Si induced by patterned indium tin oxide on a glass substrate
002D44 (1988) Short range association of EL2 with dislocations in GaAs-In materials
002D94 (1988) Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes
002E12 (1988) EL2o distribution in the vicinity of dislocations in GaAs-In materials
002E32 (1987) Préparation d'hétérostructures Ga In As Sb / Ga Sb émettant à 2,5 μm

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