Multiple layer < Multiple quantum well < Multiple quantum well modulators

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List of bibliographic references

Number of relevant bibliographic references: 120.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000012 (2013)		Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000020 (2013)		Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
000117 (2012)		Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells : Indium Nitride and Related Alloys
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000199 (2011)		M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices
000319 (2010)		GaN-based nanowires: From nanometric-scale characterization to light emitting diodes
000333 (2010)		Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses
000394 (2009)		Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000419 (2009)		Microstructure analysis in strained-InGaN/GaN multiple quantum wells
000475 (2009)		A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
000478 (2009)		1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality
000686 (2007)		Electrooptic properties of InGaAsP-based asymmetric double quantum well electroabsorption modulators
000687 (2007)		Electrooptic properties of InGaAsP asymmetric double quantum wells : Enhanced slope efficiency in waveguide electroabsorption modulators
000705 (2007)		Current status of AlInN layers lattice-matched to GaN for photonics and electronics
000732 (2007)		A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator
000736 (2007)		1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material
000756 (2006)		Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays
000766 (2006)		Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000823 (2006)		Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
000835 (2006)		Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber
000866 (2005)		V-defects and dislocations in InGaN/GaN heterostructures

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