Misfit stress < Mismatch lattice < Mismatching

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 87.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000064 (2013)		Efficiency limits of laser power converters for optical power transfer applications
000249 (2011)		A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000273 (2010)		Recent advances in the MOVPE growth of indium nitride
000296 (2010)		Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
000297 (2010)		Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000339 (2010)		Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN
000448 (2009)		HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth
000487 (2008)		Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000500 (2008)		Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate
000651 (2007)		Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000705 (2007)		Current status of AlInN layers lattice-matched to GaN for photonics and electronics
000728 (2007)		An evaluation of the growth of nitrides on semipolar substrates using two indicators
000733 (2007)		A 200-GHz true E-mode low-noise MHEMT
000766 (2006)		Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000787 (2006)		Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures
000807 (2006)		Investigation of InN layers grown by MOCVD using analytical and high resolution TEM : The structure, band gap, role of the buffer layers
000887 (2005)		Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys
000894 (2005)		Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
000943 (2005)		Interfacial structure of MBE grown InN on GaN

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