Serveur d'exploration sur l'Indium - Analysis (France)

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Manufacturing methods < Manufacturing process < Manufacturing processes  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]
Ident.Authors (with country if any)Title
000077 (2013) 12.4% Efficient Cu(In,Ga)Se2 solar cell prepared from one step electrodeposited Cu-In-Ga oxide precursor layer
000214 (2011) High efficiency cadmium free Cu(In,Ga)Se2 thin film solar cells terminated by an electrodeposited front contact
000218 (2011) Gravure printed flexible organic photovoltaic modules
000314 (2010) High efficient plastic solar cells fabricated with a high-throughput gravure printing method
000840 (2006) Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices
000933 (2005) Micro-lens on polarization maintaining fibre for coupling with 1.55 μm quantum dot devices
000961 (2005) Grain size of lead selenide electrodeposited onto InP followed by photoluminescence of the InP substrate
000981 (2005) Electrodeposition of chalcogenide semiconductors
000D96 (2003) Cd-free Cu(In, Ga)Se2 thin-film solar modules with In2S3 buffer layer by ALCVD
000E94 (2002) Vertical cavity InGaN LEDs grown by MOVPE
001016 (2002) Fabrication and study of photovoltaic material CuInxGa1-xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport
001034 (2002) Copper indium diselenide solar cells prepared by electrodeposition
001087 (2001-07) ELABORATION ET ETUDE DE COUCHES MINCES DE DISULFURE DE MOLYBDENE ET DE DERIVES DE SULFURE D'INDIUM. CONTRIBUTION A LA REALISATION DE PHOTOPILES
001185 (2001) Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
001224 (2001) Inductively coupled plasma -- plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)
001298 (2000-12) InAsSb sur GaSb : un matériau pour la détection infrarouge à température ambiante
001370 (2000) Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz
001424 (2000) Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer
001621 (1999) Transistors et circuits intégrés à hétérostructures (III-V)
001A41 (1998) A new and simple method for manufacturing electrochromic tungsten oxide films
001F42 (1996) Fabrication of InP-based freestanding microstructures by selective surface micromachining

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