List of bibliographic references
Number of relevant bibliographic references: 102.
[0-20] [
0 - 20][
0 - 50][
20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 000020 (2013) |
| Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer |
| 000025 (2013) |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE |
| 000067 (2013) |
| Effect of GaN template thickness and morphology on AlxGa1-xN (0 |
| 000088 (2012) |
| The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys |
| 000109 (2012) |
| Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters |
| 000116 (2012) |
| Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys |
| 000125 (2012) |
| High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys |
| 000172 (2011) |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth |
| 000174 (2011) |
| Structural analysis of site-controlled InAs/InP quantum dots |
| 000197 (2011) |
| MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar )nN on sapphire substrate : Growth of Group III Nitrides |
| 000199 (2011) |
| M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices |
| 000205 (2011) |
| Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds |
| 000219 (2011) |
| Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides |
| 000231 (2011) |
| Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires |
| 000250 (2011) |
| 1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings |
| 000264 (2010) |
| Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates |
| 000273 (2010) |
| Recent advances in the MOVPE growth of indium nitride |
| 000297 (2010) |
| Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content |
| 000299 (2010) |
| MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire |
| 000321 (2010) |
| Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates |
| 000411 (2009) |
| Optical, structural investigations and band-gap bowing parameter of GaInN alloys |
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