MMIC < MOCVD < MOCVD coatings

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 52.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000109 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000115 (2012)		Investigation of indium nitride for micro-nanotechnology
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000143 (2012)		480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000155 (2011)		The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000174 (2011)		Structural analysis of site-controlled InAs/InP quantum dots
000177 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000186 (2011)		Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method
000216 (2011)		Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000317 (2010)		Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics
000411 (2009)		Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000421 (2009)		MOVPE growth of InN buffer layers on sapphire
000438 (2009)		InN excitonic deformation potentials determined experimentally
000452 (2009)		Growth of InN films and nanostructures by MOVPE
000474 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature
000651 (2007)		Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000760 (2006)		Superconductivity of InN with a well defined Fermi surface
000807 (2006)		Investigation of InN layers grown by MOCVD using analytical and high resolution TEM : The structure, band gap, role of the buffer layers
000866 (2005)		V-defects and dislocations in InGaN/GaN heterostructures
000890 (2005)		Single-transverse-mode InGaAsP-InP edge-emitting bipolar cascade laser

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