Low power < Low pressure < Low pressure metallorganic vapor phase epitaxy

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List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000012 (2013)		Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000054 (2013)		High frequency top-down junction-less silicon nanowire resonators
000088 (2012)		The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys
000321 (2010)		Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
000526 (2008)		One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000530 (2008)		Non-Fermi liquid behavior in the magnetotransport of quasi two-dimensional heavy Fermion compounds CeMIn5
000533 (2008)		New hints on the origin of quantum criticality in CeCoIn5: A Hall effect study
000541 (2008)		Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000659 (2007)		Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000A97 (2004)		Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000B20 (2004)		MOVPE growth of A1GaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers
000F75 (2002)		Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
001953 (1998)		Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001996 (1998)		High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
002391 (1994)		LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002724 (1993)		Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane
002886 (1992)		High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser
002895 (1992)		Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
002A33 (1991)		Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence
002B48 (1990)		In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measuremets

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