Localized state < Localized states < Logarithmic function

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List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000117 (2012)		Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells : Indium Nitride and Related Alloys
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000693 (2007)		Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000704 (2007)		Current-voltage (I-V) studies of Mo/γ-In2Se3/ZnO : Al diode structures
000804 (2006)		Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
000825 (2006)		Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
000945 (2005)		Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
000A11 (2005)		Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells
000A96 (2004)		Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000E21 (2002-11-15)		Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000E55 (2002-06-15)		Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas
000F21 (2002)		Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
001062 (2001-11-12)		Photoluminescence Up-Conversion in Single Self-Assembled InAs/GaAs Quantum Dots
001113 (2001-03-12)		On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells
001218 (2001)		Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs
001296 (2000-12)		SPECTROSCOPIE OPTIQUE DE COUCHES MASSIVES DE GaN ET D'HETEROSTRUCTURES (In,Ga)N/GaN
001337 (2000-04-17)		Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
002057 (1995-04-15)		Excitonic properties and resonance widths in biased (Ga,In)As-GaAs double quantum wells
002105 (1995)		Transport properties of InSex flash evaporated thin films

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