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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « LPE »
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LMTO method < LPE < LSI circuit  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000175 (2011) Status of p-on-n Arsenic-Implanted HgCdTe Technologies
000198 (2011) MCT IR detectors in France
000346 (2010) Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
000391 (2009) Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
000396 (2009) Status of p-on-n HgCdTe technologies at DEFIR
000409 (2009) Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation
000500 (2008) Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate
000B47 (2004) Growth of silicon thin film by LPE on porous silicon bilayers
000B70 (2004) Comparative study of LPE and VPE silicon thin film on porous sacrificial layer
000D02 (2003) Role of cadmium on epitaxial growth of PbSe on InP single crystals
001457 (2000) Electrodeposition of PbSe epitaxial films on (111) InP
001987 (1998) Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers
001F50 (1996) Epitaxial growth of chemically deposited cubic cadmium sulphide films on (100) indium phosphide
001F72 (1996) Be+ implanted GaInAsSb/GaSb photodiodes
001F92 (1995-12) Lasers à injection à Ga0.88 In0.12 As0.10 Sb0.90
002264 (1994-08-01) High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 μm
002291 (1994-05-09) 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

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