Serveur d'exploration sur l'Indium - Analysis (France)

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Ion extraction < Ion implantation < Ion irradiation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 58.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000157 (2011) The high sensitivity of InN under rare earth ion implantation at medium range energy
000391 (2009) Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
000409 (2009) Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation
000448 (2009) HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth
000571 (2008) HgCdTe FPAs made by Arsenic-ion implantation
000735 (2007) 1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000793 (2006) Nonlinear optical properties of copper nanoparticles synthesized in indium tin oxide matrix by ion implantation
000831 (2006) Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL
000952 (2005) High-power room temperature emission quantum cascade lasers at λ = 9 μm
000B30 (2004) Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules
000D02 (2003) Role of cadmium on epitaxial growth of PbSe on InP single crystals
000F31 (2002) Recent development in infrared FPAs with multispectral 1282IRCMOS
001001 (2002) Implant and characterization of highly concentrated Fe deep centers in InP
001004 (2002) High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001028 (2002) Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT
001045 (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001305 (2000-11-06) Red electroluminescence in Si+-implanted sol-gel-derived SiO2 films
001402 (2000) Pre-alloying implants with indium as an enabling technology to extend titanium salicide towards 0.1-μm linewidths
001536 (1999-09-13) 1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
001553 (1999-07) RÉALISATION, CARACTÉRISATION ET APPLICATION D'OXYDES EN COUCHES MINCES
001683 (1999) Optimization of In2O3 transparent conductive films by Ge ion implantation

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