Interfacial area < Interfacial layer < Interference

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000049 (2013)		Influence of flexible substrates on inverted organic solar cells using sputtered ZnO as cathode interfacial layer
000088 (2012)		The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys
000125 (2012)		High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys
000138 (2012)		Comparison of ITO/metal/ITO and ZnO/metal/ZnO characteristics as transparent electrodes for third generation solar cells
000260 (2010)		The structure of InAlN/GaN heterostructures for high electron mobility transistors
000331 (2010)		Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers
000884 (2005)		Study of the Mo thin films and Mo/CIGS interface properties
000F01 (2002)		TEM evaluation of epitaxial strain in III-V semi-conductors: evidence of coherent and incoherent stress relaxation
000F09 (2002)		Study of indium tin oxide -4,4'-bis(4-dimethylaminostyryl) benzene interface: an X ray photoelectron spectroscopy investigation
000F38 (2002)		Preparation and characterization of antiferroelectric PZT thin films on steel substrates using intermediate oxide layers
000F45 (2002)		Photoinduced non-linear optical effects in the ZnS-Al, In-Sn doped film-glass nanometer-sized interfaces
001746 (1999)		Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
001761 (1999)		Cobalt contacts on indium arsenide
001763 (1999)		Characterization of the M.S structure by the surface photoelectrical voltage method
001B06 (1997-07)		Contribution à l'étude d'interfaces de semi-conducteurs III-V par spectroscopies de photoélectrons : cas de l'interface GaAs-GaInP
001C82 (1997)		Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
001D10 (1997)		As surface segregation during the growth of GaInP on GaAs
002127 (1995)		Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures
002488 (1993-06)		Epitaxie métal sur semi-conducteur II-VI: Cas des terres rares sur le CdTe
002785 (1992)		Essais d'accroissement de la barrière du contact métal/InP type n par l'introduction artificielle d'états accepteurs
002810 (1992)		Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells

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