Serveur d'exploration sur l'Indium - Analysis (France)

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Interface state errors < Interface states < Interface structure  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 51.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000477 (2009) A comparative study of Schottky barrier height enhancement by realized pseudo-Schottky diodes on p-InP
000497 (2008) Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
000A30 (2004-05-07) Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000C02 (2003-12-15) Insulating states of a broken-gap two-dimensional electron-hole system
000C30 (2003-07-15) Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
000C54 (2003-03-01) In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000E21 (2002-11-15) Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000E26 (2002-11-01) Monte Carlo simulation of electron transport in narrow gap heterostructures
000E27 (2002-10-28) Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
000E36 (2002-09-01) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
000E50 (2002-06-17) Temperature dependence of intersublevel absorption in InAs/GaAs self-assembled quantum dots
000E51 (2002-06-15) Zero-field spin quantum beats in charged quantum dots
000E62 (2002-05-15) Perpendicular electric transport in Fe/X/Fe model heterostructures
001061 (2001-11-15) Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices
001062 (2001-11-12) Photoluminescence Up-Conversion in Single Self-Assembled InAs/GaAs Quantum Dots
001070 (2001-10-22) Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
001100 (2001-05-07) Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks
001108 (2001-04-01) Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure
001110 (2001-03-15) Second-harmonic generation resonant with s-p transition in InAs/GaAs self-assembled quantum dots
001114 (2001-03-12) Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

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