Interface defect < Interface electron state < Interface energy

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List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
000443 (2009)		III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
000838 (2006)		Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 x 2-c(8 x 2)
000D03 (2003)		Rigorous analysis of the electronic properties of InP interfaces for gas sensing
001212 (2001)		Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy
001284 (2001)		Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
001414 (2000)		Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001430 (2000)		Interface redox engineering of Cu(In, Ga)Se2-based solar cells : oxygen, sodium, and chemical bath effects
001462 (2000)		Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
001485 (2000)		Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity
001874 (1998-04)		Etude des propriétés électroniques et structurales des interfaces GaSe/Si(111) et InSe/Si(111) par la photoémission angulaire dans l'ultraviolet
001970 (1998)		Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
001B10 (1997-07)		CONTRIBUTION A L ETUDE DES PROPRIETES DES HETEROJONCTIONS FORMEES PAR DES COMPOSES LAMELLAIRES (InSe OU GaSe) EPITAXIES SUR DU Si(111)
001D52 (1996-10)		Contribution à la caractérisation des diodes Schottky Oxydées: Application au phosphure d'indium
002233 (1994-11)		Transport électronique en régime de mobilité: application aux systèmes bidimensionnels contraints InAlAs/InGaAs/InAlAs
002582 (1993)		Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures
002592 (1993)		Optical studies of InP/InAlAs/InP interface recombinations
002774 (1992-03)		Etude spectroscopique en rayonnement synchrotron de la chimisorption et de la formation de l'épitaxie des terres rares sur semi-conducteur
002785 (1992)		Essais d'accroissement de la barrière du contact métal/InP type n par l'introduction artificielle d'états accepteurs
002984 (1991)		Preparation electrical properties and interface studies of plasma nitride layers on n-type InP
002988 (1991)		Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film
002A71 (1991)		Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy

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