Serveur d'exploration sur l'Indium - Analysis (France)

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Interband transition < Interband transitions < Intercalation compound  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]
Ident.Authors (with country if any)Title
000278 (2010) Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast
000289 (2010) Optical properties of InN grown on Si(111) substrate
000372 (2009) Unifying description of the optical properties of InN from first principles
000427 (2009) Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots
000501 (2008) Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
000553 (2008) Intersublevel transitions in self-assembled quantum dots
000651 (2007) Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000670 (2007) Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000680 (2007) Giant intersubband polariton splitting in InAs/AlSb microcavities
000746 (2006) Two time scales of the electron-hole spin relaxation in InAs/GaAs quantum dots
000752 (2006) Towards a mid-infrared polaron laser using InAs/GaAs self-assembled quantum dots
000787 (2006) Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures
000899 (2005) Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots
000951 (2005) Hole-LO phonon interaction in InAs/GaAs quantum dots
000B12 (2004) Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN
000B28 (2004) Linewidth enhancement factor in InGaAs quantum-dot amplifiers
000B59 (2004) Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
000B79 (2004) Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000C78 (2003) Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1-xGaxAsySb1-y epilayer on GaSb and InAs
000D41 (2003) Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
000D54 (2003) In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP

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