Indium nitrate < Indium nitride < Indium nitrides

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List of bibliographic references

Number of relevant bibliographic references: 52.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000025 (2013)		Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000028 (2013)		Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000030 (2013)		Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells
000067 (2013)		Effect of GaN template thickness and morphology on AlxGa1-xN (0
000068 (2013)		Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires
000082 (2012)		Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000094 (2012)		Structure and strain state of polar and semipolar InGaN quantum dots
000096 (2012)		Structural, electronic and vibrational properties of InN under high pressure
000097 (2012)		Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
000102 (2012)		Probing Quantum Confinement within Single Core-Multishell Nanowires
000109 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000112 (2012)		Morphology and origin of V-defects in semipolar (11-22) InGaN
000115 (2012)		Investigation of indium nitride for micro-nanotechnology
000117 (2012)		Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells : Indium Nitride and Related Alloys
000123 (2012)		Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
000132 (2012)		E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
000157 (2011)		The high sensitivity of InN under rare earth ion implantation at medium range energy
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000177 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000197 (2011)		MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar )nN on sapphire substrate : Growth of Group III Nitrides
000199 (2011)		M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices

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