Serveur d'exploration sur l'Indium - Analysis (France)

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Indium compound < Indium compounds < Indium devices  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 457.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000047 (2013) Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
000109 (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000112 (2012) Morphology and origin of V-defects in semipolar (11-22) InGaN
000126 (2012) Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000155 (2011) The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000216 (2011) Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics
000620 (2007) The composition dependence of the optical band gap in Ge-Se-In thin films
000911 (2005) Optical properties of Yb3+ ions in halogeno-sulphide glasses
000A23 (2004-06-15) Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations
000A24 (2004-06-01) Study of thiol-induced adhesion of stressed III-V semiconductor on wax using thin film elastic relaxation
000A25 (2004-06-01) Conductance quantization in deep mesa-etched gate-controlled ballistic electron waveguides
000A27 (2004-05-24) Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000A29 (2004-05-07) Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction
000A30 (2004-05-07) Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000A33 (2004-04-15) Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001)
000A37 (2004-04-05) Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000A38 (2004-04) Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence
000A39 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

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