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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Indium Arsenides phosphides »
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Indium Arsenides nitrides < Indium Arsenides phosphides < Indium Bismuth Alloys  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000008 (2013) Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals
000011 (2013) Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000500 (2008) Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate
000D29 (2003) Multiwafer gas source MBE development for InGaAsP/InP laser production
001138 (2001) Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001456 (2000) Electronic structure of interdiffused GaInAs(P)/GaInAsP quantum wells
001518 (1999-11) Réalisation par épitaxie en phase vapeur par la méthode aux hydrures de puits quantiques contraints InAsxP1-x/InP
001722 (1999) Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001749 (1999) Elastic stress relaxation in GaInAsP quantum wires on InP
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
002014 (1995-10) Etude du triméthylarsenic comme alternative à l'arsine pour l'Epitaxie en Phase Vapeur aux OrganoMétalliques de semiconducteurs III-V sur substrats InP
002635 (1993) Lateral modulations in zero-net-strained GalnAsP multilayers growtn by gas source molecular-beam epitaxy
002895 (1992) Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
003097 (1984) Selectivity of resonant Raman scattering in InAsxP1-x solid solutions

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