ITO layers < IV characteristic < Icosahedral phase

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 45.
[0-20] [0 - 20][0 - 45][20-40]

Ident.	Authors (with country if any)	Title
000222 (2011)		Facile route to prepare film of poly(3,4-ethylene dioxythiophene)-TiO2 nanohybrid for solar cell application
000413 (2009)		Optical and electrical properties of semi-conducting calix[5,9]arene thin films with potential applications in organic electronics
000493 (2008)		Terahertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels : Heterostructure Terahertz Devices
000583 (2008)		Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applications
000613 (2007)		Transport mechanism and trap distribution in ITO/azo-calix[4]arene derivative/al diode structure
000667 (2007)		Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000704 (2007)		Current-voltage (I-V) studies of Mo/γ-In2Se3/ZnO : Al diode structures
000748 (2006)		Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000845 (2006)		Defect states investigation in poly(2-methoxy,5-(2/ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)
000953 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000982 (2005)		Electrical properties of doped 3-tetradecylpolypyrrole/metal devices
000A13 (2005)		CBr4 and be heavily doped InGaAs grown in a production MBE system
000B18 (2004)		MOVPE-grown quantum cascade lasers operating at ∼9 μm wavelength
000D38 (2003)		Magnetoresistance in long InSb nanowires
000E03 (2003)		Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators
001001 (2002)		Implant and characterization of highly concentrated Fe deep centers in InP
001192 (2001)		Numerical analysis of forward I-V characteristics of Au/InP interface restructured by antimony
001206 (2001)		Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid
001252 (2001)		Enhanced shot noise in long quasi-diffusive S-N-S junctions
001295 (2000-12)		«CARACTÉRISATION DES CENTRES DE RECOMBINAISON NON-RADIATIFS DANS LES SEMICONDUCTEURS»
001462 (2000)		Effect of InSb layer on the interfacial and electrical properties in the structures based on InP

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