Heterostructure phototransistor < Heterostructures < Heusler alloy

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List of bibliographic references

Number of relevant bibliographic references: 154.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000028 (2013)		Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000033 (2013)		Optimized ITO-free tri-layer electrode for organic solar cells
000034 (2013)		Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell
000113 (2012)		Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000154 (2011)		Theory of g-factor enhancement in narrow-gap quantum well heterostructures
000232 (2011)		Effect of maleic anhydride-aniline derivative buffer layer on the properties of flexible substrate heterostructures: Indium tin oxide/nucleic acid base/metal
000236 (2011)		Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000249 (2011)		A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
000260 (2010)		The structure of InAlN/GaN heterostructures for high electron mobility transistors
000303 (2010)		Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications
000318 (2010)		Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000319 (2010)		GaN-based nanowires: From nanometric-scale characterization to light emitting diodes
000328 (2010)		Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
000339 (2010)		Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN
000375 (2009)		Tunable (La, Sr)MnO3 (LSMO) Ferromagnetic Thin Films for Radio Frequency Applications
000378 (2009)		Thickness dependent physical properties of close space evaporated In2S3 films
000422 (2009)		MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
000430 (2009)		Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000443 (2009)		III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
000448 (2009)		HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth
000474 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature

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