Heterodyning < Heteroepitaxy < Heterogeneity

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List of bibliographic references

Number of relevant bibliographic references: 46.
[0-20] [0 - 20][0 - 46][20-40]

Ident.	Authors (with country if any)	Title
000040 (2013)		Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices
000197 (2011)		MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar )nN on sapphire substrate : Growth of Group III Nitrides
000299 (2010)		MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire
000449 (2009)		Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison
000949 (2005)		III-V layer transfer onto silicon and applications
000A76 (2004)		Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system
000B49 (2004)		Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000C91 (2003)		Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 μm laser emission
000C95 (2003)		Stress-induced structural changes in thin InAs layers grown on GaAs substrate
000F87 (2002)		Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films
001133 (2001)		Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001261 (2001)		Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces
001314 (2000-10)		Croissance auto-organisée de fils et boîtes quantiques d'InAs / InP(001) pour composants optoélectroniques
001349 (2000-02)		L'APPROCHE PARAMORPHIQUE : UN NOUVEAU PROCEDE POUR L'HETEROEPITAXIE DE MATERIAUX IDEALEMENT RELAXES. APPLICATION A LA CROISSANCE DE InGaAs ON InP SUBSTRATE
001371 (2000)		Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates
001701 (1999)		Metal organic vapour phase epitaxy of GaN and lateral overgrowth
001714 (1999)		Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001777 (1999)		A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs
001850 (1998-07)		Etude de la croissance épitaxiale par jets moléculaires des lamellaires (GaSe, InSe) sur silicium et de ZnSe sur lamellaire
001A91 (1997-09)		Etude par microscopie tunnel de la transition 2D-3D lors de la croissance épitaxique de couches contraintes In1-xGaxAs sur InP (001)
001B99 (1997)		Synchrotron radiation multiple diffraction study of Al0.304Ga0.172 In0.524 as MOVPE grown onto InP(001)

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