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Index « Keywords » - entrée « Heavily doped semiconductors »
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List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000C01 (2003-12-15) Isoelectronic traps in heavily doped GaAs:(In,N)
000E58 (2002-06-03) Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
000E59 (2002-06-01) Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
001293 (2000-12-15) Quasi-one-dimensional transport in the extreme quantum limit of heavily doped n-InSb
001552 (1999-07-01) Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y
001582 (1999-04-15) Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
001B00 (1997-07-15) X-ray photoemission studies and energy-band diagrams of (In,Se)-CuInSe2/SnO2 heterostructures

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