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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Hall mobility »
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Hall effect devices < Hall mobility < Halogen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000002 (2014) Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
000028 (2013) Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000461 (2009) Effect of pressure on electrical properties of short period InAs/GaSb superlattice
000525 (2008) Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applications
000955 (2005) High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
000A14 (2005) As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000E66 (2002-05) Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions
000E71 (2002-04-01) Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
001469 (2000) CuInS2 thin films for solar cell applications
001843 (1998-07-15) Interface quality and electron transfer at the GaInP on GaAs heterojunction
001A19 (1998) Doping optimizations for InGaAs/InP composite channel HEMTs
001B18 (1997-06-01) Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production
002605 (1993) Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction
002D26 (1988) Very high purity InP epilayer grown by metalorganic chemical vapor deposition
003023 (1986) Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE
003029 (1986) Electrical and optical properties of In2Se3 thin films

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