Growth from solution < Growth from vapor < Growth interface

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List of bibliographic references

Number of relevant bibliographic references: 47.
[0-20] [0 - 20][0 - 47][20-40]

Ident.	Authors (with country if any)	Title
000F61 (2002)		Nitride-based long-wavelength lasers on GaAs substrates
001C07 (1997)		Spatially resolved optical of spectroscopy of GaAs islands on InAs (111)
001C59 (1997)		InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
001C82 (1997)		Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
002207 (1995)		Butt-jointed DBR laser with 15 nm tunability grown in three MOVPE steps
002209 (1995)		Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier
002269 (1994-07)		Elaboration par E.P.V.O.M. d'un photodétecteur A Ga1-xInxSb et Ga1-xInxAsySb1-y pour télécommunications à plus de deux micromètres
002617 (1993)		Monolayer scale study of segregation effects in InAs/GaAs heterostructures
002645 (1993)		Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
002648 (1993)		Indium doping of (001), (111) and (211) CdTe layers grown by molecular beam epitaxy
002650 (1993)		InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy
002663 (1993)		Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb
002668 (1993)		Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
002691 (1993)		Electrical properties of P-rich InP grown by gas source MBE
002708 (1993)		Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions
002725 (1993)		Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002730 (1993)		Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy
002743 (1993)		A new organoindium precursor for electronic materials
002752 (1993)		1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy
002790 (1992)		Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
002791 (1992)		Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP

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