Ground state < Ground states < Group IIIB metal Antimonides

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List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
000216 (2011)		Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics
000244 (2011)		Behavior of the Quantum Critical Point and the Fermi-Liquid Domain in the Heavy Fermion Superconductor CeCoIn5 Studied by Resistivity
000259 (2010)		Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser
000317 (2010)		Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics
000358 (2010)		Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
000372 (2009)		Unifying description of the optical properties of InN from first principles
000382 (2009)		Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
000397 (2009)		Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
000492 (2008)		The Quantum Critical Point in CeRhIn5 : A Resistivity Study
000529 (2008)		Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots
000558 (2008)		Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
000599 (2008)		Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy
000602 (2008)		Anisotropy of the electron Landé g factor in InAs/GaAs self-assembled quantum dots
000657 (2007)		Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007)		Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000682 (2007)		First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
000785 (2006)		Photoreflectance study at the micrometer scale
000786 (2006)		Photoreflectance spectroscopy of self-organized InAs/InP(0 01) quantum sticks emitting at 1.55 μm
000788 (2006)		Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000796 (2006)		NQR studies of CePd2In under hydrostatic pressure
000799 (2006)		Meta-GGA calculation of the electronic structure of group III-V nitrides

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