Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Gallium phosphides »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Gallium phosphide < Gallium phosphides < Gallium selenides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 110.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000654 (2007) Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000657 (2007) Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007) Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000687 (2007) Electrooptic properties of InGaAsP asymmetric double quantum wells : Enhanced slope efficiency in waveguide electroabsorption modulators
000729 (2007) All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation
000738 (2006) Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
000820 (2006) High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications
000844 (2006) Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors
000860 (2006) Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000996 (2005) Design of monolithic integrated Bragg gratings in InGaAsP/InP materials as chirped pulse compressors
000A08 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000A20 (2005) Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
000A81 (2004) Solid-solution strengthening in ordered InxGa1-xP alloys
000B08 (2004) Negative refraction at infrared wavelengths in a two-dimensional photonic crystal
000B17 (2004) Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures
000B63 (2004) Effect of strain on atomic ordering and action of surfactants in ternary alloy thin films
000D80 (2003) Early failure signatures of 1310 nm laser modules using electrical, optical and spectral measurements
000D82 (2003) Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers
000E00 (2003) Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Gallium phosphides" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Gallium phosphides" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Gallium phosphides
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024