Gallium ion < Gallium nitride < Gallium nitride arsenide

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 46.
[0-20] [0 - 20][0 - 46][20-40]

Ident.	Authors (with country if any)	Title
000025 (2013)		Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000028 (2013)		Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000030 (2013)		Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells
000067 (2013)		Effect of GaN template thickness and morphology on AlxGa1-xN (0
000068 (2013)		Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires
000088 (2012)		The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys
000094 (2012)		Structure and strain state of polar and semipolar InGaN quantum dots
000097 (2012)		Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
000102 (2012)		Probing Quantum Confinement within Single Core-Multishell Nanowires
000112 (2012)		Morphology and origin of V-defects in semipolar (11-22) InGaN
000125 (2012)		High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000132 (2012)		E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
000155 (2011)		The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000177 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000186 (2011)		Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method
000199 (2011)		M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices
000217 (2011)		Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
000226 (2011)		Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors
000257 (2010)		Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions

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