Gallium compound < Gallium compounds < Gallium fluoride

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List of bibliographic references

Number of relevant bibliographic references: 108.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000588 (2008)		Dependence of the meniscus shape on the pressure difference in the dewetted Bridgman process
000911 (2005)		Optical properties of Yb3+ ions in halogeno-sulphide glasses
000A23 (2004-06-15)		Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations
000A28 (2004-05-17)		GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000A31 (2004-05-03)		Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A37 (2004-04-05)		Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000A40 (2004-03-29)		High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability
000A45 (2004-03)		Investigation of the Possibility of Obtaining Homogeneous Ga1 - xInxSb Crystals under Weak Flow Conditions
000C02 (2003-12-15)		Insulating states of a broken-gap two-dimensional electron-hole system
000C06 (2003-12-08)		Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers
000C07 (2003-11-15)		p-n junctions in (In,Se)/Cu(In,Ga)(Se,S)2 photovoltaic systems
000C13 (2003-10-15)		Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
000C16 (2003-09-01)		Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C19 (2003-08-18)		Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C30 (2003-07-15)		Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
000C37 (2003-05-19)		Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C41 (2003-05-01)		Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers
000C46 (2003-04-07)		In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000C51 (2003-03-24)		GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000C53 (2003-03-10)		Determination of built-in electric fields in quaternary InAlGaN heterostructures

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