Gallium antimonides < Gallium arsenides < Gallium base alloys

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 879.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000010 (2013)		Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots
000015 (2013)		The role of heavy-light-hole mixing on the optical initialization of hole spin in InAs quantum dots
000027 (2013)		Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors
000034 (2013)		Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell
000073 (2013)		Band parameters of InGaAs/GaAs quantum dots: electronic properties study
000093 (2012)		Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000143 (2012)		480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000216 (2011)		Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics
000221 (2011)		Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
000226 (2011)		Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors
000241 (2011)		Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission
000262 (2010)		The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000269 (2010)		Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
000303 (2010)		Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications
000317 (2010)		Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics
000377 (2009)		Three-dimensional localization of excitons in the InAs/GaAs wetting layer -magnetospectroscopic study
000394 (2009)		Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000406 (2009)		Relation between photocurrent and DLTS signals observed for quantum dot systems
000427 (2009)		Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots
000430 (2009)		Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

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