Gallium Oxides < Gallium Phosphides < Gallium Selenides

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List of bibliographic references

Number of relevant bibliographic references: 64.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000230 (2011)		Efficient parametric interactions in a low loss GaInP photonic crystal waveguide
000328 (2010)		Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
000340 (2010)		Defect assisted subwavelength resolution in III-V semiconductor photonic crystal flat lenses with n = -1
000373 (2009)		Ultracompact optical filter based on a stub resonator in GaInAsP/InP optical wire technology
000454 (2009)		Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers
000482 (2008)		Wide electrical tunability of a GaInAsP/InP microdisk resonator
000536 (2008)		Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes
000566 (2008)		Impedance Mismatch in Negative Index Photonic Crystals
000570 (2008)		High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line
000576 (2008)		Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000592 (2008)		Compact Optical Modulator based on Carrier Induced Gain of an InP/InGaAsP Micro-disk Cavity Integrated on SOI
000686 (2007)		Electrooptic properties of InGaAsP-based asymmetric double quantum well electroabsorption modulators
001297 (2000-12)		Préparation par épitaxie par jets moléculaires d'alliages III-V à base de thallium
001595 (1999-02)		Etude de la technologie et des potentialités pour l'amplification de puissance hyperfréquence des transistors à effet de champ des filières phosphure AlGaInP/GaInAs et métamorphique AlInAs/GaInAs sur substrat GaAs
001667 (1999)		Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
001714 (1999)		Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001726 (1999)		High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001812 (1998-11)		Epitaxie par jets moléculaires à sources gazeuses des matériaux (AlGa)InP sur substrat GaAs pour applications hyperfréquences
001853 (1998-07)		CARACTERISATION ET BRUIT DE FOND DE TRANSISTORS BIPOLAIRES
001896 (1998-01)		Conception, réalisation et caractérisation de transistors bipolaires de puissance à hétérojonction GaInP/GaAs et comparaison avec les TBH's GaAlAs/GaAs
001984 (1998)		Investigation on base surface recombination in Self Passivated GaAlAs/GalnP/GaAs Heterojunction Bipolar Transistor

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