Gallium Indium Phosphides Arsenides Mixed < Gallium Indium Phosphides Mixed < Gallium Indium Phosphorus Arsenides Mixed

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List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]

Ident.	Authors (with country if any)	Title
000443 (2009)		III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
002335 (1994)		Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences
002337 (1994)		Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAs
002503 (1993-02)		Bruit de fond dans les transistors à effet de champ et bipolaires pour micro-ondes
002549 (1993)		Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy
002567 (1993)		Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE
002605 (1993)		Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction
002638 (1993)		Intermixing of GaInP/GaAs multiple quantum wells
002659 (1993)		High quality 0.98 μm GaInAs/GaAs/GaInP lasers growth by CBE using tertiarybutylarsine and tertiarybutylphosphine
002710 (1993)		Defects in electron irradiated GaInP
002725 (1993)		Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002736 (1993)		Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
002753 (1993)		'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth
002756 (1992-11)		Contribution à l'étude des défauts DX et EL2 et propriétés de transport dans les structures à plan de dopage GaInAs, GaAs et dans les hétérojonctions InGaAs/AlGaAs, GaInP/GaAs
002814 (1992)		Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures
002886 (1992)		High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser
002941 (1991-02)		Etude de la croissance du système GaAlInP/GaInP/GaAs par épitaxie en phase vapeur aux organométalliques pour la réalisation de lasers visibles
002961 (1991)		Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE
002973 (1991)		Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
002993 (1991)		Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
002A04 (1991)		Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures

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