GSMBE < GSMBE method < Gadolinium Fluorides

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List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]

Ident.	Authors (with country if any)	Title
000658 (2007)		Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000827 (2006)		Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
000929 (2005)		Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000955 (2005)		High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
000963 (2005)		GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000A20 (2005)		Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
000D29 (2003)		Multiwafer gas source MBE development for InGaAsP/InP laser production
000D61 (2003)		Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D65 (2003)		Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy
000D83 (2003)		Determination of beryllium and self-interstitial diffusion parameters in InGaAs
000E00 (2003)		Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
001240 (2001)		Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides
001384 (2000)		Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates
001419 (2000)		Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates
001482 (2000)		Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001661 (1999)		Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus
001665 (1999)		Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001668 (1999)		Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm
001672 (1999)		Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001726 (1999)		High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001750 (1999)		Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch

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