Femtosecond < Fermi level < Fermi liquid

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]

Ident.	Authors (with country if any)	Title
000140 (2012)		Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device
000221 (2011)		Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
000696 (2007)		Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy
000810 (2006)		Interface formation and structural properties of iron films on Al0.48In0.52As (001)
000846 (2006)		Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
000897 (2005)		Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1-xGax)Se2 thin films versus optical band gap
000C40 (2003-05-01)		Evolution of the band structure of β-In2S3-3xO3x buffer layer with its oxygen content
000C54 (2003-03-01)		In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000D03 (2003)		Rigorous analysis of the electronic properties of InP interfaces for gas sensing
000E15 (2002-12-15)		Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
000E55 (2002-06-15)		Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas
000F46 (2002)		Photoconductivity techniques for defect spectroscopy of photovoltaic materials
001245 (2001)		Formation by laser impact of conducting β-Ga2O3-In2O3 solid solutions with composition gradients
001284 (2001)		Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
001355 (2000-01)		Nouvelle méthode d'investigation par effet Hall des états d'interface dans les composants à base d'hétérostructures III-V
001546 (1999-08-01)		Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001582 (1999-04-15)		Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
001745 (1999)		Electrical resistivity and absolute thermoelectric power of liquid indium-nickel-manganese ternary alloys
001B16 (1997-06-15)		Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measurements under pressure
001B29 (1997-06)		CONTRIBUTION A L'ETUDE DES PROPRIETES DE TRANSPORT ELECTRONIQUE D'ALLIAGES METALLIQUES A BASE D'INDIUM ET DE METAUX DE TRANSITION
001D36 (1996-11)		SIMULATION NUMERIQUE DE LA DIFFUSION DE DOPANTS DANS LES MATERIAUX III-V POUR LES COMPOSANTS MICROOPTOELECTRONIQUES

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